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ON Semiconductor FDT4N50NZU

FDT4N50NZU ON Semiconductor
ON Semiconductor

Product Information

Maximum Drain Source Voltage:
500 V
Maximum Continuous Drain Current:
2 A
Mounting Type:
Surface Mount
Series:
UniFET II
Channel Type:
N
Maximum Gate Threshold Voltage:
5.5V
Maximum Drain Source Resistance:
3 Ω
Package Type:
SOT-223
Number of Elements per Chip:
1
Pin Count:
3
Rds On (Max) @ Id, Vgs:
3Ohm @ 1A, 10V
Detailed Description:
N-Channel 500V 2A (Tc) 2W (Tc) Surface Mount SOT-223 (TO-261)
Input Capacitance (Ciss) (Max) @ Vds:
476pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
5.5V @ 250µA
Series:
UltraFRFET™, Unifet™ II
Vgs (Max):
±25V
Gate Charge (Qg) (Max) @ Vgs:
9.1nC @ 10V
Supplier Device Package:
SOT-223 (TO-261)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-261-4, TO-261AA
Power Dissipation (Max):
2W (Tc)
Drain to Source Voltage (Vdss):
500V
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDT4N50NZU. It has a maximum of 500 v drain source voltage. While 2 a of maximum continuous drain current. The product is available in surface mount configuration. The product unifet ii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5.5v of maximum gate threshold voltage. It provides up to 3 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. It contains 3 pins. It has a maximum Rds On and voltage of 3ohm @ 1a, 10v. It features n-channel 500v 2a (tc) 2w (tc) surface mount sot-223 (to-261). The product's input capacitance at maximum includes 476pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The typical Vgs (th) (max) of the product is 5.5v @ 250µa. The product ultrafrfet™, unifet™ ii, is a highly preferred choice for users. The maximum Vgs rate is ±25v. The maximum gate charge and given voltages include 9.1nc @ 10v. sot-223 (to-261) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-261-4, to-261aa. The product carries maximum power dissipation 2w (tc). The product has a 500v drain to source voltage. The continuous current drain at 25°C is 2a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Datasheet - FDT4N50NZU(Technical Reference)
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FDT4N50NZU(Datasheets)

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FAQs

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We accept all major payment methods for all products including ET21206861. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with FDT4N50NZU directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor FDT4N50NZU. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor FDT4N50NZU.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21206861 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21206861.
Yes. We ship FDT4N50NZU Internationally to many countries around the world.