This is manufactured by ON Semiconductor. The manufacturer part number is FDT4N50NZU. It has a maximum of 500 v drain source voltage. While 2 a of maximum continuous drain current. The product is available in surface mount configuration. The product unifet ii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5.5v of maximum gate threshold voltage. It provides up to 3 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. It contains 3 pins. It has a maximum Rds On and voltage of 3ohm @ 1a, 10v. It features n-channel 500v 2a (tc) 2w (tc) surface mount sot-223 (to-261). The product's input capacitance at maximum includes 476pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The typical Vgs (th) (max) of the product is 5.5v @ 250µa. The product ultrafrfet™, unifet™ ii, is a highly preferred choice for users. The maximum Vgs rate is ±25v. The maximum gate charge and given voltages include 9.1nc @ 10v. sot-223 (to-261) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-261-4, to-261aa. The product carries maximum power dissipation 2w (tc). The product has a 500v drain to source voltage. The continuous current drain at 25°C is 2a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
Datasheet - FDT4N50NZU(Technical Reference)
FDT4N50NZU(Datasheets)
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This is manufactured by ON Semiconductor. The manufacturer part number is FDT4N50NZU. It has a maximum of 500 v drain source voltage. While 2 a of maximum continuous drain current. The product is available in surface mount configuration. The product unifet ii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5.5v of maximum gate threshold voltage. It provides up to 3 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. It contains 3 pins. It has a maximum Rds On and voltage of 3ohm @ 1a, 10v. It features n-channel 500v 2a (tc) 2w (tc) surface mount sot-223 (to-261). The product's input capacitance at maximum includes 476pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The typical Vgs (th) (max) of the product is 5.5v @ 250µa. The product ultrafrfet™, unifet™ ii, is a highly preferred choice for users. The maximum Vgs rate is ±25v. The maximum gate charge and given voltages include 9.1nc @ 10v. sot-223 (to-261) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-261-4, to-261aa. The product carries maximum power dissipation 2w (tc). The product has a 500v drain to source voltage. The continuous current drain at 25°C is 2a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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