STMicroelectronics STW68N65DM6-4AG

STW68N65DM6-4AG STMicroelectronics
STW68N65DM6-4AG
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
72 A
Mounting Type:
Through Hole
Channel Type:
N
Maximum Gate Threshold Voltage:
4.75V
Maximum Drain Source Resistance:
39 mΩ
Package Type:
TO-247-4
Number of Elements per Chip:
1
Pin Count:
4
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
39mOhm @ 36A, 10V
Gate Charge (Qg) (Max) @ Vgs:
118 nC @ 10 V
Vgs(th) (Max) @ Id:
4.75V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STW68N65DM6-4AG Models
FET Type:
N-Channel
edacadModelUrl:
/en/models/13559150
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
480W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
5900 pF @ 100 V
Mounting Type:
Through Hole
Grade:
Automotive
Series:
MDmesh™
Supplier Device Package:
TO-247-4
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
72A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW68
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STW68N65DM6-4AG. It has a maximum of 650 v drain source voltage. While 72 a of maximum continuous drain current. The product is available in through hole configuration. The product is available in [Cannel Type] channel. The product carries 4.75v of maximum gate threshold voltage. It provides up to 39 mω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 39mohm @ 36a, 10v. The maximum gate charge and given voltages include 118 nc @ 10 v. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 480w (tc). It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 5900 pf @ 100 v. The product is automotive, a grade of class. The product mdmesh™, is a highly preferred choice for users. to-247-4 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 72a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw68, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet - STW68N65DM6-4AG(Technical Reference)
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STW68N65DM6-4AG(Datasheets)

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