MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP

Enrgtech Part No: ET20303488
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Manufacturer Part No:
DMNH6035SPDW-13
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Manufacturer: DiodesZetex

DMNH6035SPDW-13 MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP

Product Information

Maximum Drain Source Voltage:

60 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

DMNH6035

Channel Type:

Maximum Gate Threshold Voltage:

Maximum Drain Source Resistance:

0.044 Ω

Package Type:

PowerDI5060-8

Number of Elements per Chip:

Maximum Continuous Drain Current:

33 A

Transistor Material:

Pin Count:

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The DMNH6035SPDW-13 is a high-performance N-Channel enhancement-mode MOSFET from DiodesZetex, specifically engineered for efficient power-switching applications. This transistor is housed in a compact, thermally optimised PowerDI5060-8 surface mount package. Built with high-quality Silicon (Si) material, it offers a robust maximum drain-source voltage of 60V and a low maximum on-resistance of 0.044 Ω. This combination ensures high power efficiency and a continuous drain current of 33A, making it ideal for high-power density designs.

The Top Reasons to Use the DiodesZetex DMNH6035SPDW-13 MOSFET

The top reasons to use the MOSFET include its exceptional power efficiency, thanks to its low on-resistance, which minimises energy loss in switching circuits. Its 33A continuous drain current and 60V rating support robust power applications. The compact PowerDI5060-8 package saves valuable board space while enhancing thermal performance.

Core Performance Features & Key Uses of the DMNH6035SPDW-13 MOSFET

Channel Type: N-Channel, Enhancement Mode
Maximum Drain Source Voltage: 60V
Maximum Continuous Drain Current: 33A
Max Drain Source Resistance (Rds(on)): 0.044 Ω
Package Type: PowerDI5060-8 (Surface Mount)
Key Use: High-efficiency power switching and management applications.

Datasheet - DMNH6035SPDW-13(Technical Reference)

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