Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3
Product Information
Maximum Drain Source Voltage:
30 V
Maximum Continuous Drain Current:
94.6 A
Channel Mode:
Enhancement
Series:
SiZ998BDT
Channel Type:
N
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
0.00439 Ω
Package Type:
PowerPAIR 6 x 5
Number of Elements per Chip:
2
Pin Count:
8
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay SIZ998BDT-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20282145 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20282145.
Yes. We ship SIZ998BDT-T1-GE3 Internationally to many countries around the world.
This is Dual N-Channel MOSFET 94.6 A 30 V 8-Pin PowerPAIR 6 x 5 manufactured by Vishay. The manufacturer part number is SIZ998BDT-T1-GE3. It has a maximum of 30 v drain source voltage. While 94.6 a of maximum continuous drain current. The product carries enhancement channel mode. The product siz998bdt, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.00439 ω maximum drain source resistance. The package is a sort of powerpair 6 x 5. It consists of 2 elements per chip. It contains 8 pins.
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