N-Channel MOSFET, 41 A, 600 V, 3-Pin D2PAK Vishay SIHB068N60EF-GE3
Product Information
Maximum Drain Source Voltage:
600 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SiHB068N60EF
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.068 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
41 A
Pin Count:
3
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 41 A, 600 V, 3-Pin D2PAK Vishay SIHB068N60EF-GE3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 41 A, 600 V, 3-Pin D2PAK Vishay SIHB068N60EF-GE3.
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Yes. We ship SIHB068N60EF-GE3 Internationally to many countries around the world.
This is N-Channel MOSFET 41 A 600 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB068N60EF-GE3. It has a maximum of 600 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product sihb068n60ef, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.068 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 41 a of maximum continuous drain current. It contains 3 pins.
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