P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3
Product Information
Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET® Gen IV
Channel Type:
P
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
0.016 Ω, 0.0095 Ω
Package Type:
SO-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
18.3 A
Pin Count:
8
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FAQs
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You can order Vishay brand products with Si4425FDY-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET19996183 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET19996183.
Yes. We ship Si4425FDY-T1-GE3 Internationally to many countries around the world.
This is P-Channel MOSFET 18.3 A 30 V 8-Pin SO-8 manufactured by Vishay. The manufacturer part number is Si4425FDY-T1-GE3. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet® gen iv, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.016 ω, 0.0095 ω maximum drain source resistance. The package is a sort of so-8. It consists of 1 elements per chip. While 18.3 a of maximum continuous drain current. It contains 8 pins.
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