P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3

Si4425FDY-T1-GE3 P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET® Gen IV
Channel Type:
P
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
0.016 Ω, 0.0095 Ω
Package Type:
SO-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
18.3 A
Pin Count:
8
RoHs Compliant
Checking for live stock

This is P-Channel MOSFET 18.3 A 30 V 8-Pin SO-8 manufactured by Vishay. The manufacturer part number is Si4425FDY-T1-GE3. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet® gen iv, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.016 ω, 0.0095 ω maximum drain source resistance. The package is a sort of so-8. It consists of 1 elements per chip. While 18.3 a of maximum continuous drain current. It contains 8 pins.

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Document- Si4425FDY-T1-GE3(Technical Reference)

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