Dual SiC N-Channel SiC Power Module, 200 A, 1200 V, 35-Pin Easy 2B™/ Module Infineon FF6MR12W2M1B11BOMA1
Product Information
Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
200 A
Channel Mode:
Enhancement
Series:
CoolSiC
Channel Type:
N
Maximum Gate Threshold Voltage:
5.55V
Maximum Drain Source Resistance:
0.00825 Ω
Package Type:
Easy 2B™/ Module
Number of Elements per Chip:
2
Transistor Material:
SiC
Pin Count:
35
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual SiC N-Channel SiC Power Module, 200 A, 1200 V, 35-Pin Easy 2B™/ Module Infineon FF6MR12W2M1B11BOMA1. You can also check on our website or by contacting our customer support team for further order details on Dual SiC N-Channel SiC Power Module, 200 A, 1200 V, 35-Pin Easy 2B™/ Module Infineon FF6MR12W2M1B11BOMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET19992970 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET19992970.
Yes. We ship FF6MR12W2M1B11BOMA1 Internationally to many countries around the world.
This is Dual SiC N-Channel SiC Power Module 200 A 1200 V 35-Pin Easy 2B™/ Module manufactured by Infineon. The manufacturer part number is FF6MR12W2M1B11BOMA1. It has a maximum of 1200 v drain source voltage. While 200 a of maximum continuous drain current. The product carries enhancement channel mode. The product coolsic, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5.55v of maximum gate threshold voltage. It provides up to 0.00825 ω maximum drain source resistance. The package is a sort of easy 2b™/ module. It consists of 2 elements per chip. The transistor is manufactured from highly durable sic material. It contains 35 pins.
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