SiC N-Channel MOSFET, 56 A, 1200 V, 3-Pin PG-TO247-3 Infineon IMW120R030M1HXKSA1

Infineon

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
81W
Maximum Drain Source Voltage Vds:
75V
Channel Mode:
N
Maximum Gate Source Voltage Vgs:
20 V
Series:
IMW
Forward Voltage Vf:
1.3V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
80nC
Package Type:
TO-247
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
3mΩ
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
52A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Pin Count:
3
Mount Type:
Surface
RoHs Compliant
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This is SiC N-Channel MOSFET 56 A 1200 V 3-Pin PG-TO247-3 manufactured by Infineon. The manufacturer part number is IMW120R030M1HXKSA1. The product complies with automotive standard - no. The product carries n channel mode. The product imw, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55°c. mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 175°c. It contains 3 pins. It has a surface type mount .

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Datasheet - IMW120R030M1HXKSA1(Technical Reference)

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