N-Channel MOSFET, 280 mA, 60 V, 3-Pin SOT-23 Microchip TN2106K1-G

Microchip

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
360 mW
Series:
TN2106
Maximum Gate Source Voltage:
20 V
Maximum Gate Threshold Voltage:
2V
Height:
1.02mm
Width:
1.4mm
Length:
3.04mm
Maximum Drain Source Resistance:
5 Ω
Package Type:
TO-236
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
280 mA
Minimum Gate Threshold Voltage:
0.6V
Forward Diode Voltage:
1.8V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-Channel MOSFET 280 mA 60 V 3-Pin SOT-23 manufactured by Microchip. The manufacturer part number is TN2106K1-G. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 360 mw maximum power dissipation. The product tn2106, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 1.02mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. It provides up to 5 ω maximum drain source resistance. The package is a sort of to-236. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 280 ma of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.6v. Its forward diode voltage is 1.8v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)

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