Dual N-Channel MOSFET, 1.1 A, 250 V Depletion, 4-Pin DPAK Microchip DN2625K4-G
Product Information
Maximum Drain Source Voltage:
250 V
Typical Gate Charge @ Vgs:
7.04 nC @ 1.5 V
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Gate Source Voltage:
20 V
Series:
DN2625
Height:
2.29mm
Width:
6.1mm
Length:
6.6mm
Maximum Drain Source Resistance:
3.5 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.1 A
Forward Diode Voltage:
1.8V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is Dual N-Channel MOSFET 1.1 A 250 V Depletion 4-Pin DPAK manufactured by Microchip. The manufacturer part number is DN2625K4-G. It has a maximum of 250 v drain source voltage. With a typical gate charge at Vgs includes 7.04 nc @ 1.5 v. The product is available in surface mount configuration. The product carries depletion channel mode. It features a maximum gate source voltage of 20 v. The product dn2625, is a highly preferred choice for users. In addition, the height is 2.29mm. Furthermore, the product is 6.1mm wide. Its accurate length is 6.6mm. It provides up to 3.5 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.1 a of maximum continuous drain current. Its forward diode voltage is 1.8v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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