N-Channel 40-V (D-S) MOSFET TO-220 650M
Product Information
Maximum Continuous Drain Current:
150 A
Width:
4.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
130 nC @ 10 V
Channel Type:
N
Length:
10.51mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
150 W
Maximum Gate Source Voltage:
±20 V
Height:
9.01mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
2.3 mΩ
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You will get a confirmation email regarding your order of N-Channel 40-V (D-S) MOSFET TO-220 650M. You can also check on our website or by contacting our customer support team for further order details on N-Channel 40-V (D-S) MOSFET TO-220 650M.
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Yes. We ship SUP40012EL-GE3 Internationally to many countries around the world.
This is N-Channel 40-V (D-S) MOSFET TO-220 650M manufactured by Vishay. The manufacturer part number is SUP40012EL-GE3. While 150 a of maximum continuous drain current. Furthermore, the product is 4.65mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 130 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.51mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 150 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 9.01mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 2.3 mω maximum drain source resistance.
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