40 V N- and P-Channel Common Drain MOSFE
Product Information
Automotive Standard:
AEC-Q101
Maximum Drain Source Voltage:
200 (Channel 3) V, 40 (Channel 1) V, 40 (Channel 2) V
Typical Gate Charge @ Vgs:
14 nC @ 100 V (Channel 3), 23 nC @ 20 V (Channel 2), 30.2 nC @ 20 V (Channel 1)
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W, 48 W, 60 W
Maximum Gate Source Voltage:
20 V
Channel Type:
NPN
Maximum Gate Threshold Voltage:
2.5 (Channel 1) V, 2.5 (Channel 2) V, 3.5 (Channel 3) V
Maximum Drain Source Resistance:
0.0135 (Channel 2) Ω, 0.048 (Channel 1) Ω, 0.06 (Channel 3) Ω
Package Type:
Triple Die
Number of Elements per Chip:
3
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
30 A, 30 A, 20 A
Minimum Gate Threshold Voltage:
1.5 (Channel 1) V, 1.5 (Channel 2) V, 2.5 (Channel 3) V
Maximum Operating Temperature:
+175 °C
Pin Count:
10
Transistor Configuration:
Common Drain
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You can order Vishay brand products with SQUN702E-T1_GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of 40 V N- and P-Channel Common Drain MOSFE. You can also check on our website or by contacting our customer support team for further order details on 40 V N- and P-Channel Common Drain MOSFE.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18211569 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18211569.
Yes. We ship SQUN702E-T1_GE3 Internationally to many countries around the world.
This is 40 V N- and P-Channel Common Drain MOSFE manufactured by Vishay. The manufacturer part number is SQUN702E-T1_GE3. The product complies with automotive standard - aec-q101. It has a maximum of 200 (channel 3) v, 40 (channel 1) v, 40 (channel 2) v drain source voltage. With a typical gate charge at Vgs includes 14 nc @ 100 v (channel 3), 23 nc @ 20 v (channel 2), 30.2 nc @ 20 v (channel 1). The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 48 w, 48 w, 60 w maximum power dissipation. It features a maximum gate source voltage of 20 v. The product is available in [Cannel Type] channel. The product carries 2.5 (channel 1) v, 2.5 (channel 2) v, 3.5 (channel 3) v of maximum gate threshold voltage. It provides up to 0.0135 (channel 2) ω, 0.048 (channel 1) ω, 0.06 (channel 3) ω maximum drain source resistance. The package is a sort of triple die. It consists of 3 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 30 a, 30 a, 20 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.5 (channel 1) v, 1.5 (channel 2) v, 2.5 (channel 3) v. It has a maximum operating temperature of +175 °c. It contains 10 pins. The product offers common drain transistor configuration.
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