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United Kingdom
This is N-Channel 30 V (D-S) MOSFET with Schottk manufactured by Vishay. The manufacturer part number is SISS60DN-T1-GE3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 57 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 65.8 w maximum power dissipation. It features a maximum gate source voltage of -12 v, +16 v. The product carries 2.5v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 3.3mm wide. Its accurate length is 3.3mm. It provides up to 2.01 mω maximum drain source resistance. The package is a sort of powerpak 1212-8s. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 181.8 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. Its forward diode voltage is 0.68v . In addition, the height is 0.78mm. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
For more information please check the datasheets.
Basket Total:
£ 0.000
