N-Channel 80-V (D-S) MOSFET PowerPAK 121

Vishay

Product Information

Maximum Drain Source Voltage:
80 V
Typical Gate Charge @ Vgs:
32.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
57 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.5V
Channel Type:
N
Width:
3.3mm
Length:
3.3mm
Maximum Drain Source Resistance:
12 mΩ
Package Type:
PowerPAK 1212-8S
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
55.5 A
Minimum Gate Threshold Voltage:
1V
Forward Diode Voltage:
1.1V
Height:
0.78mm
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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This is N-Channel 80-V (D-S) MOSFET PowerPAK 121 manufactured by Vishay. The manufacturer part number is SISS30LDN-T1-GE3. It has a maximum of 80 v drain source voltage. With a typical gate charge at Vgs includes 32.5 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 57 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2.5v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 3.3mm wide. Its accurate length is 3.3mm. It provides up to 12 mω maximum drain source resistance. The package is a sort of powerpak 1212-8s. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 55.5 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. Its forward diode voltage is 1.1v . In addition, the height is 0.78mm. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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Datasheet SISS30LDN-T1-GE3(Technical Reference)

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