N-Channel 30 V (D-S) MOSFET PowerPAK 121
Product Information
Maximum Continuous Drain Current:
40 A
Width:
3.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
PowerPAK 1212-8SH
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
51 nC @ 10 V
Channel Type:
N
Length:
3.3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
52 W
Maximum Gate Source Voltage:
-16 V, +20 V
Height:
0.93mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
3.1 mΩ
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Yes. We ship SISHA04DN-T1-GE3 Internationally to many countries around the world.
This is N-Channel 30 V (D-S) MOSFET PowerPAK 121 manufactured by Vishay. The manufacturer part number is SISHA04DN-T1-GE3. While 40 a of maximum continuous drain current. Furthermore, the product is 3.3mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.2v of maximum gate threshold voltage. The package is a sort of powerpak 1212-8sh. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 51 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 52 w maximum power dissipation. It features a maximum gate source voltage of -16 v, +20 v. In addition, the height is 0.93mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 3.1 mω maximum drain source resistance.
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