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United Kingdom
This is MOSFET PowerPAK 1212-8SH 1G manufactured by Vishay. The manufacturer part number is SiSH101DN-T1-GE3. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 68 nc @ 15 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 52 w maximum power dissipation. It features a maximum gate source voltage of ±25 v. The product carries 2.5v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 3.3mm wide. Its accurate length is 3.3mm. It provides up to 13 mω maximum drain source resistance. The package is a sort of powerpak 1212-8sh. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 35 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.2v. Its forward diode voltage is 1.2v . In addition, the height is 0.93mm. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
For more information please check the datasheets.
Basket Total:
£ 0.000
