Common - Drain Dual N-Channel 25 V (S1-S

Vishay

Product Information

Width:
3.4 mm
Maximum Drain Source Resistance Rds:
5mΩ
Automotive Standard:
No
Transistor Configuration:
Common Drain
Typical Gate Charge Qg @ Vgs:
37nC
Package Type:
PowerPAK 1212
Number of Elements per Chip:
2
Maximum Continuous Drain Current Id:
60A
Product Type:
Power MOSFET
Maximum Operating Temperature:
-55°C
Maximum Drain Source Voltage Vds:
25V
Channel Type:
Type N
Length:
3.4mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
69.4W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
16 V
Series:
TrenchFET Gen IV
Height:
0.75mm
Minimum Operating Temperature:
150°C
RoHs Compliant
Checking for live stock

This is Common - Drain Dual N-Channel 25 V (S1-S manufactured by Vishay. The manufacturer part number is SISF02DN-T1-GE3. Furthermore, the product is 3.4 mm wide. The product complies with automotive standard - no. The product offers common drain transistor configuration. The package is a sort of powerpak 1212. It consists of 2 elements per chip. power mosfet is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of -55°c. The product is available in [Cannel Type] channel. Its accurate length is 3.4mm. It contains 8 pins. It has a surface type mount . The product carries enhancement channel mode. The product trenchfet gen iv, is a highly preferred choice for users. In addition, the height is 0.75mm. Whereas, the minimum operating temperature of the product is 150°c.

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Datasheet SISF02DN-T1-GE3(Technical Reference)

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You will get a confirmation email regarding your order of Common - Drain Dual N-Channel 25 V (S1-S. You can also check on our website or by contacting our customer support team for further order details on Common - Drain Dual N-Channel 25 V (S1-S.