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This is E Series Power MOSFET TO-247AC manufactured by Vishay. The manufacturer part number is SIHG21N80AE-GE3. It has a maximum of 800 v drain source voltage. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 32 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 4v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 5.31mm wide. Its accurate length is 15.87mm. It provides up to 235 mω maximum drain source resistance. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 17.4 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.2v . In addition, the height is 20.82mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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