EF Series Power MOSFET With Fast Body Di
Product Information
Maximum Continuous Drain Current:
19 A
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
48 nC @ 10 V
Channel Type:
N
Length:
10.41mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
179 W
Maximum Gate Source Voltage:
±30 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
182 mΩ
Checking for live stock
FAQs
Yes. You can also search SIHB22N60EF-GE3 on website for other similar products.
We accept all major payment methods for all products including ET18211519. Please check your shopping cart at the time of order.
You can order Vishay brand products with SIHB22N60EF-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of EF Series Power MOSFET With Fast Body Di. You can also check on our website or by contacting our customer support team for further order details on EF Series Power MOSFET With Fast Body Di.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18211519 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18211519.
Yes. We ship SIHB22N60EF-GE3 Internationally to many countries around the world.
This is EF Series Power MOSFET With Fast Body Di manufactured by Vishay. The manufacturer part number is SIHB22N60EF-GE3. While 19 a of maximum continuous drain current. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.41mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 179 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 182 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.