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This is E Series Power MOSFET Thin-Lead TO-220 F manufactured by Vishay. The manufacturer part number is SIHA100N60E-GE3. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 33 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 35 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. The product carries 5v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 4.7mm wide. Its accurate length is 10.3mm. It provides up to 100 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 30 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3v. Its forward diode voltage is 1.2v . In addition, the height is 15.3mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
Basket Total:
£ 0.000
