N-Channel 45 V (D-S) MOSFET PowerPAK SO-
Product Information
Maximum Continuous Drain Current:
208 A
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
45 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
PowerPAK SO
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
111 nC @ 10 V
Channel Type:
N
Length:
5.99mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
104 W
Maximum Gate Source Voltage:
-16 V, +20 V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
1.8 mΩ
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FAQs
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You can order Vishay brand products with SiDR608DP-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel 45 V (D-S) MOSFET PowerPAK SO-. You can also check on our website or by contacting our customer support team for further order details on N-Channel 45 V (D-S) MOSFET PowerPAK SO-.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18211516 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18211516.
Yes. We ship SiDR608DP-T1-GE3 Internationally to many countries around the world.
This is N-Channel 45 V (D-S) MOSFET PowerPAK SO- manufactured by Vishay. The manufacturer part number is SiDR608DP-T1-GE3. While 208 a of maximum continuous drain current. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 45 v drain source voltage. The product carries 2.3v of maximum gate threshold voltage. The package is a sort of powerpak so. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 111 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.99mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 104 w maximum power dissipation. It features a maximum gate source voltage of -16 v, +20 v. In addition, the height is 1.07mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 1.8 mω maximum drain source resistance.
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