TK5P50D(T6RSS-Q) N-Channel MOSFET, 5 A, 500 V, 3-Pin DPAK Toshiba
Product Information
Maximum Drain Source Voltage:
500 V
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
80 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4.4V
Height:
2.3mm
Width:
6.1mm
Length:
6.6mm
Maximum Drain Source Resistance:
1.5 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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FAQs
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You can order Toshiba brand products with TK5P50D(T6RSS-Q) directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of TK5P50D(T6RSS-Q) N-Channel MOSFET, 5 A, 500 V, 3-Pin DPAK Toshiba. You can also check on our website or by contacting our customer support team for further order details on TK5P50D(T6RSS-Q) N-Channel MOSFET, 5 A, 500 V, 3-Pin DPAK Toshiba.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET17883146 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET17883146.
Yes. We ship TK5P50D(T6RSS-Q) Internationally to many countries around the world.
This is N-Channel MOSFET 5 A 500 V 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TK5P50D(T6RSS-Q). It has a maximum of 500 v drain source voltage. With a typical gate charge at Vgs includes 11 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 80 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4.4v of maximum gate threshold voltage. In addition, the height is 2.3mm. Furthermore, the product is 6.1mm wide. Its accurate length is 6.6mm. It provides up to 1.5 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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