DMP45H21DHE-13 P-Channel MOSFET, 0.4 (State) A, 0.6 (Steady) A, 450 V, 3 + Tab-Pin SOT-223 Diodes Inc
Product Information
Maximum Continuous Drain Current:
600 mA
Width:
3.55mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
450 V
Maximum Gate Threshold Voltage:
5V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.2 nC @ 10V
Channel Type:
P
Length:
6.55mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
12.5 W
Maximum Gate Source Voltage:
±30 V
Height:
1.65mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
21 Ω
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You will get a confirmation email regarding your order of DMP45H21DHE-13 P-Channel MOSFET, 0.4 (State) A, 0.6 (Steady) A, 450 V, 3 + Tab-Pin SOT-223 Diodes Inc. You can also check on our website or by contacting our customer support team for further order details on DMP45H21DHE-13 P-Channel MOSFET, 0.4 (State) A, 0.6 (Steady) A, 450 V, 3 + Tab-Pin SOT-223 Diodes Inc.
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Yes. We ship DMP45H21DHE-13 Internationally to many countries around the world.
This is P-Channel MOSFET 0.4 (State) A 0.6 (Steady) A 450 V 3 + Tab-Pin SOT-223 Diodes Inc manufactured by DiodesZetex. The manufacturer part number is DMP45H21DHE-13. While 600 ma of maximum continuous drain current. Furthermore, the product is 3.55mm wide. The product offers single transistor configuration. It has a maximum of 450 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 4.2 nc @ 10v. The product is available in [Cannel Type] channel. Its accurate length is 6.55mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 12.5 w maximum power dissipation. It features a maximum gate source voltage of ±30 v. In addition, the height is 1.65mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 21 ω maximum drain source resistance.
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