DMN2450UFD-7 N-Channel MOSFET, 0.7 (State) A, 0.9 (Steady) A, 20 V, 3-Pin X1-DFN1212 Diodes Inc
Product Information
Maximum Continuous Drain Current:
900 mA
Width:
1.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
X1-DFN1212
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.45V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.7 nC @ 4.5 V
Channel Type:
N
Length:
1.25mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
890 mW
Maximum Gate Source Voltage:
±12 V
Height:
0.48mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.6 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of DMN2450UFD-7 N-Channel MOSFET, 0.7 (State) A, 0.9 (Steady) A, 20 V, 3-Pin X1-DFN1212 Diodes Inc. You can also check on our website or by contacting our customer support team for further order details on DMN2450UFD-7 N-Channel MOSFET, 0.7 (State) A, 0.9 (Steady) A, 20 V, 3-Pin X1-DFN1212 Diodes Inc.
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Yes. We ship DMN2450UFD-7 Internationally to many countries around the world.
This is N-Channel MOSFET 0.7 (State) A 0.9 (Steady) A 20 V 3-Pin X1-DFN1212 Diodes Inc manufactured by DiodesZetex. The manufacturer part number is DMN2450UFD-7. While 900 ma of maximum continuous drain current. Furthermore, the product is 1.25mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of x1-dfn1212. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.45v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.7 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 1.25mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 890 mw maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 0.48mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 1.6 mω maximum drain source resistance.
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