SSM3J108TU(TE85L) P-Channel MOSFET, 1.8 A, 20 V SSM3, 3-Pin UFM Toshiba
Product Information
Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Series:
SSM3
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.7mm
Width:
1.7mm
Length:
2mm
Maximum Drain Source Resistance:
158 mΩ
Package Type:
UFM
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.8 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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This is P-Channel MOSFET 1.8 A 20 V SSM3 3-Pin UFM manufactured by Toshiba. The manufacturer part number is SSM3J108TU(TE85L). It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 800 mw maximum power dissipation. The product ssm3, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. The product carries 1v of maximum gate threshold voltage. In addition, the height is 0.7mm. Furthermore, the product is 1.7mm wide. Its accurate length is 2mm. It provides up to 158 mω maximum drain source resistance. The package is a sort of ufm. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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