SSM6N25TU(TE85L,F) Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin UF Toshiba
Product Information
Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.1V
Height:
0.7mm
Width:
1.7mm
Length:
2mm
Maximum Drain Source Resistance:
145 mΩ
Package Type:
UF
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
500 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
Checking for live stock
FAQs
Yes. You can also search SSM6N25TU(TE85L,F) on website for other similar products.
We accept all major payment methods for all products including ET17547897. Please check your shopping cart at the time of order.
You can order Toshiba brand products with SSM6N25TU(TE85L,F) directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of SSM6N25TU(TE85L,F) Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin UF Toshiba. You can also check on our website or by contacting our customer support team for further order details on SSM6N25TU(TE85L,F) Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin UF Toshiba.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET17547897 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET17547897.
Yes. We ship SSM6N25TU(TE85L,F) Internationally to many countries around the world.
This is Dual N-Channel MOSFET 500 mA 20 V 6-Pin UF manufactured by Toshiba. The manufacturer part number is SSM6N25TU(TE85L,F). It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of -12 v, +12 v. The product carries 1.1v of maximum gate threshold voltage. In addition, the height is 0.7mm. Furthermore, the product is 1.7mm wide. Its accurate length is 2mm. It provides up to 145 mω maximum drain source resistance. The package is a sort of uf. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 500 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration.
Reviews
Don’t hesitate to ask questions for better clarification.