SSM3K7002FU(F) N-Channel MOSFET, 200 mA, 60 V, 3-Pin USM Toshiba

SSM3K7002FU-F- SSM3K7002FU(F) N-Channel MOSFET, 200 mA, 60 V, 3-Pin USM Toshiba
Toshiba

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
0.9mm
Width:
1.25mm
Length:
2mm
Maximum Drain Source Resistance:
3 Ω
Package Type:
USM
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-Channel MOSFET 200 mA 60 V 3-Pin USM manufactured by Toshiba. The manufacturer part number is SSM3K7002FU(F). It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. It provides up to 3 ω maximum drain source resistance. The package is a sort of usm. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 200 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Tr., S-MOS, Nch, 60V/0.2A, SC-70(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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