SSM3K7002FU(F) N-Channel MOSFET, 200 mA, 60 V, 3-Pin USM Toshiba
Product Information
Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
0.9mm
Width:
1.25mm
Length:
2mm
Maximum Drain Source Resistance:
3 Ω
Package Type:
USM
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Checking for live stock
FAQs
Yes. You can also search SSM3K7002FU(F) on website for other similar products.
We accept all major payment methods for all products including ET17544522. Please check your shopping cart at the time of order.
You can order Toshiba brand products with SSM3K7002FU(F) directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of SSM3K7002FU(F) N-Channel MOSFET, 200 mA, 60 V, 3-Pin USM Toshiba. You can also check on our website or by contacting our customer support team for further order details on SSM3K7002FU(F) N-Channel MOSFET, 200 mA, 60 V, 3-Pin USM Toshiba.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET17544522 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET17544522.
Yes. We ship SSM3K7002FU(F) Internationally to many countries around the world.
This is N-Channel MOSFET 200 mA 60 V 3-Pin USM manufactured by Toshiba. The manufacturer part number is SSM3K7002FU(F). It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. It provides up to 3 ω maximum drain source resistance. The package is a sort of usm. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 200 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
Reviews
Don’t hesitate to ask questions for better clarification.