MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K
Product Information
Maximum Continuous Drain Current:
7 A
Width:
3.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
SO-8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19 nC @ 8V
Channel Type:
P
Length:
4.95mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.8 W
Maximum Gate Source Voltage:
±12 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
52 mΩ
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You will get a confirmation email regarding your order of MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K. You can also check on our website or by contacting our customer support team for further order details on MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K.
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Yes. We ship DMP2040USS-13 Internationally to many countries around the world.
This is MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K manufactured by DiodesZetex. The manufacturer part number is DMP2040USS-13. While 7 a of maximum continuous drain current. Furthermore, the product is 3.9mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.5v of maximum gate threshold voltage. The package is a sort of so-8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 19 nc @ 8v. The product is available in [Cannel Type] channel. Its accurate length is 4.95mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.8 w maximum power dissipation. It features a maximum gate source voltage of ±12 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 52 mω maximum drain source resistance.
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