MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
Product Information
Maximum Continuous Drain Current:
5.2 (State) A, 6.5 (Steady) A
Width:
2.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
U-DFN2020
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12.3 nC @ 10 V
Channel Type:
N
Length:
2.05mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
±10 V
Height:
0.58mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
60 mΩ
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This is MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K manufactured by DiodesZetex. The manufacturer part number is DMN2025UFDF-7. While 5.2 (state) a, 6.5 (steady) a of maximum continuous drain current. Furthermore, the product is 2.05mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of u-dfn2020. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.05mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.6 w maximum power dissipation. It features a maximum gate source voltage of ±10 v. In addition, the height is 0.58mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 60 mω maximum drain source resistance.
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