MOSFET BVDSS: 41V-60V V-DFN3030-8 T&R 10

DMT6018LDR-13 MOSFET BVDSS: 41V-60V V-DFN3030-8 T&R 10
DiodesZetex

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
13.9 nC @ 10V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.9 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
3V
Height:
0.8mm
Width:
3.05mm
Length:
3.05mm
Maximum Drain Source Resistance:
26 mΩ
Package Type:
V-DFN3030
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
11.4 A
Minimum Gate Threshold Voltage:
1V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
RoHs Compliant
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This is MOSFET BVDSS: 41V-60V V-DFN3030-8 T&R 10 manufactured by DiodesZetex. The manufacturer part number is DMT6018LDR-13. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 13.9 nc @ 10v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.9 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 0.8mm. Furthermore, the product is 3.05mm wide. Its accurate length is 3.05mm. It provides up to 26 mω maximum drain source resistance. The package is a sort of v-dfn3030. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 11.4 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.

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Datasheet DMT6018LDR-13(Technical Reference)

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