MOSFET BVDSS: 41V-60V X1-DFN1006-3 T&R 1

DMN62D1LFB-7B MOSFET BVDSS: 41V-60V X1-DFN1006-3 T&R 1
DiodesZetex

Product Information

Maximum Continuous Drain Current:
407 mA
Width:
0.67mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
1V
Package Type:
X1-DFN1006
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.45 nC @ 4.5V
Channel Type:
N
Length:
1.07mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
±20 V
Height:
0.48mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
3 mΩ
RoHs Compliant
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This is MOSFET BVDSS: 41V-60V X1-DFN1006-3 T&R 1 manufactured by DiodesZetex. The manufacturer part number is DMN62D1LFB-7B. While 407 ma of maximum continuous drain current. Furthermore, the product is 0.67mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of x1-dfn1006. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.45 nc @ 4.5v. The product is available in [Cannel Type] channel. Its accurate length is 1.07mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 500 mw maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.48mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 3 mω maximum drain source resistance.

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Datasheet DMN62D1LFB-7B(Technical Reference)

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