Maximum Continuous Drain Current:
43.7 (State) A, 54.7 (Steady) A
Width:
5.1mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
3V
Package Type:
PowerDI5060
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
28.6 nC @ 10V
Channel Type:
N
Length:
6mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
78 W
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
30.3 mΩ
This is MOSFET BVDSS: 61V-100V PowerDI5060-8 T&R manufactured by DiodesZetex. The manufacturer part number is DMT10H017LPD-13. While 43.7 (state) a, 54.7 (steady) a of maximum continuous drain current. Furthermore, the product is 5.1mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 3v of maximum gate threshold voltage. The package is a sort of powerdi5060. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 28.6 nc @ 10v. The product is available in [Cannel Type] channel. Its accurate length is 6mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 78 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 30.3 mω maximum drain source resistance.
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