MOSFET BVDSS: 61V-100V TO252 T&R 2.5K
Product Information
Maximum Continuous Drain Current:
46.3 A
Width:
6.2mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
21.4 nC @ 10V
Channel Type:
N
Length:
6.7mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.7 W
Maximum Gate Source Voltage:
±20 V
Height:
2.26mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
30 mΩ
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This is MOSFET BVDSS: 61V-100V TO252 T&R 2.5K manufactured by DiodesZetex. The manufacturer part number is DMTH10H025SK3-13. While 46.3 a of maximum continuous drain current. Furthermore, the product is 6.2mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 21.4 nc @ 10v. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 3.7 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.26mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 30 mω maximum drain source resistance.
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