MOSFET N-Ch 500V 14A Low Cap. TO220AB
Product Information
Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Width:
4.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
29 nC @ 10 V
Channel Type:
N
Length:
10.51mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
208 W
Series:
D Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.01mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
400 mΩ
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Yes. We ship SIHP14N50D-GE3 Internationally to many countries around the world.
This is MOSFET N-Ch 500V 14A Low Cap. TO220AB manufactured by Vishay. The manufacturer part number is SIHP14N50D-GE3. While 14 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.65mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 29 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.51mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 208 w maximum power dissipation. The product d series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 9.01mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 400 mω maximum drain source resistance.
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