N-Channel 30-V (D-S) MOSFET PowerPAK SO-
Product Information
Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
SO-8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24.1 nC @ 10 V
Channel Type:
N
Length:
5.99mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
43 W
Series:
TrenchFET
Maximum Gate Source Voltage:
-16 V, +20 V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
5 mΩ
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FAQs
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You will get a confirmation email regarding your order of N-Channel 30-V (D-S) MOSFET PowerPAK SO-. You can also check on our website or by contacting our customer support team for further order details on N-Channel 30-V (D-S) MOSFET PowerPAK SO-.
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Yes. We ship SiRA10BDP-T1-GE3 Internationally to many countries around the world.
This is N-Channel 30-V (D-S) MOSFET PowerPAK SO- manufactured by Vishay Siliconix. The manufacturer part number is SiRA10BDP-T1-GE3. While 60 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1.2v of maximum gate threshold voltage. The package is a sort of so-8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 24.1 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.99mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 43 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +20 v. In addition, the height is 1.07mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 5 mω maximum drain source resistance.
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