N-Channel 100-V (D-S) MOSFET PowerPAK 12
Product Information
Maximum Continuous Drain Current:
14.2 A
Transistor Material:
Si
Width:
3.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2V
Package Type:
PowerPAK 1212-8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.5 nC @ 10 V
Channel Type:
N
Length:
3.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
24 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
70 mΩ
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FAQs
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You can order Vishay Siliconix brand products with SiS110DN-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel 100-V (D-S) MOSFET PowerPAK 12. You can also check on our website or by contacting our customer support team for further order details on N-Channel 100-V (D-S) MOSFET PowerPAK 12.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16943914 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16943914.
Yes. We ship SiS110DN-T1-GE3 Internationally to many countries around the world.
This is N-Channel 100-V (D-S) MOSFET PowerPAK 12 manufactured by Vishay Siliconix. The manufacturer part number is SiS110DN-T1-GE3. While 14.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.15mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of powerpak 1212-8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 8.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.15mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 24 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.07mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 70 mω maximum drain source resistance.
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