Dual N-Channel 30-V (D-S) MOSFET PowerPA
Product Information
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
3mm
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Package Type:
PowerPAIR 3 x 3
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12.1 nC @ 10 V
Channel Type:
N
Length:
3mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
16.7 W
Series:
TrenchFET
Maximum Gate Source Voltage:
-16 V, +20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
10 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Dual N-Channel 30-V (D-S) MOSFET PowerPA. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel 30-V (D-S) MOSFET PowerPA.
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Yes. We ship SiZ348DT-T1-GE3 Internationally to many countries around the world.
This is Dual N-Channel 30-V (D-S) MOSFET PowerPA manufactured by Vishay Siliconix. The manufacturer part number is SiZ348DT-T1-GE3. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3mm wide. It has a maximum of 30 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of powerpair 3 x 3. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 2.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12.1 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 16.7 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +20 v. In addition, the height is 0.75mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 10 mω maximum drain source resistance.
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