N-Channel 250-V (D-S) MOSFET PowerPAK SO
Product Information
Maximum Continuous Drain Current:
12.3 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SO-8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.9 nC @ 10 V
Channel Type:
N
Length:
5.99mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
54.3 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
170 mΩ
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You can order Vishay Siliconix brand products with Si7434ADP-T1-RE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel 250-V (D-S) MOSFET PowerPAK SO. You can also check on our website or by contacting our customer support team for further order details on N-Channel 250-V (D-S) MOSFET PowerPAK SO.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16943635 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16943635.
Yes. We ship Si7434ADP-T1-RE3 Internationally to many countries around the world.
This is N-Channel 250-V (D-S) MOSFET PowerPAK SO manufactured by Vishay Siliconix. The manufacturer part number is Si7434ADP-T1-RE3. While 12.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of so-8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 10.9 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.99mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 54.3 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.07mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 170 mω maximum drain source resistance.
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