N-Channel 60-V (D-S) MOSFET PowerPAK 121
Product Information
Maximum Continuous Drain Current:
16 A
Transistor Material:
Si
Width:
3.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2V
Package Type:
1212
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.9 nC @ 10 V
Channel Type:
N
Length:
3.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
24 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
20 mΩ
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel 60-V (D-S) MOSFET PowerPAK 121. You can also check on our website or by contacting our customer support team for further order details on N-Channel 60-V (D-S) MOSFET PowerPAK 121.
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Yes. We ship SiS106DN-T1-GE3 Internationally to many countries around the world.
This is N-Channel 60-V (D-S) MOSFET PowerPAK 121 manufactured by Vishay Siliconix. The manufacturer part number is SiS106DN-T1-GE3. While 16 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.15mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of 1212. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 8.9 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.15mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 24 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.07mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 20 mω maximum drain source resistance.
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