MOSFET P-Ch 150V 27A HEXFET TO-220AB
Product Information
Maximum Continuous Drain Current:
27 A
Width:
4.69mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
71 nC @ 10 V
Channel Type:
P
Length:
10.54mm
Pin Count:
3 + Tab
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
250 W
Series:
IRF6218PbF
Maximum Gate Source Voltage:
20 V
Height:
15.24mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
Maximum Drain Source Resistance:
150 mΩ
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You will get a confirmation email regarding your order of MOSFET P-Ch 150V 27A HEXFET TO-220AB. You can also check on our website or by contacting our customer support team for further order details on MOSFET P-Ch 150V 27A HEXFET TO-220AB.
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Yes. We ship IRF6218PBF Internationally to many countries around the world.
This is MOSFET P-Ch 150V 27A HEXFET TO-220AB manufactured by Infineon. The manufacturer part number is IRF6218PBF. While 27 a of maximum continuous drain current. Furthermore, the product is 4.69mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 71 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.54mm. It contains 3 + tab pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 250 w maximum power dissipation. The product irf6218pbf, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. In addition, the height is 15.24mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.6v . It provides up to 150 mω maximum drain source resistance.
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