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Toshiba TK11P65W,RQ(S N-channel MOSFET, 11.1 A, 650 V DTMOSIV, 3-Pin DPAK

TK11P65W-RQ-S Toshiba TK11P65W,RQ(S N-channel MOSFET, 11.1 A, 650 V DTMOSIV, 3-Pin DPAK
TK11P65W,RQ(S
Toshiba

Product Information

Maximum Continuous Drain Current:
11.1 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
25 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
100 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.3mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
440 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 11.1 A 650 V DTMOSIV 3-Pin DPAK manufactured by Toshiba. The manufacturer part number is TK11P65W,RQ(S. While 11.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.1mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 25 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 100 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 2.3mm. Its forward diode voltage is 1.7v . It provides up to 440 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
pdf icon
TK11P65W, MOSFET N-Channel 650V(Technical Reference)

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FAQs

Yes. You can also search TK11P65W,RQ(S on website for other similar products.
We accept all major payment methods for all products including ET16913628. Please check your shopping cart at the time of order.
You can order Toshiba brand products with TK11P65W,RQ(S directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba TK11P65W,RQ(S N-channel MOSFET, 11.1 A, 650 V DTMOSIV, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Toshiba TK11P65W,RQ(S N-channel MOSFET, 11.1 A, 650 V DTMOSIV, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16913628 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16913628.
Yes. We ship TK11P65W,RQ(S Internationally to many countries around the world.
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