This is MOSFET N-Ch 100V 35A OptiMOS2 DPAK manufactured by Infineon. The manufacturer part number is IPD25CN10NGATMA1. While 35 a of maximum continuous drain current. Furthermore, the product is 7.47mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 23 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 71 w maximum power dissipation. The product ipd25cn10n g, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 26 mω maximum drain source resistance.
Datasheet(Technical Reference)
ESD Control Selection Guide V1(Technical Reference)
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This is MOSFET N-Ch 100V 35A OptiMOS2 DPAK manufactured by Infineon. The manufacturer part number is IPD25CN10NGATMA1. While 35 a of maximum continuous drain current. Furthermore, the product is 7.47mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 23 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 71 w maximum power dissipation. The product ipd25cn10n g, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 26 mω maximum drain source resistance.
Reviews
Don’t hesitate to ask questions for better clarification.