Infineon IPB65R660CFDATMA1 N-channel MOSFET, 6 A, 700 V CoolMOS CFD, 3-Pin D2PAK
Product Information
Maximum Drain Source Voltage:
700 V
Typical Gate Charge @ Vgs:
22 nC
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Gate Source Voltage:
-30 V, +30 V
Series:
CoolMOS CFD
Maximum Drain Source Resistance:
660 mΩ
Maximum Gate Threshold Voltage:
4.5V
Height:
4.57mm
Width:
9.45mm
Length:
10.31mm
Minimum Gate Threshold Voltage:
3.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IPB65R660CFDATMA1 Internationally to many countries around the world.
This is N-channel MOSFET 6 A 700 V CoolMOS CFD 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB65R660CFDATMA1. It has a maximum of 700 v drain source voltage. With a typical gate charge at Vgs includes 22 nc. The product is available in surface mount configuration. The product carries enhancement channel mode. It features a maximum gate source voltage of -30 v, +30 v. The product coolmos cfd, is a highly preferred choice for users. It provides up to 660 mω maximum drain source resistance. The product carries 4.5v of maximum gate threshold voltage. In addition, the height is 4.57mm. Furthermore, the product is 9.45mm wide. Its accurate length is 10.31mm. Whereas its minimum gate threshold voltage includes 3.5v. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
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