Toshiba TK31N60X,S1F(S N-channel MOSFET, 30.8 A, 600 V DTMOSIV, 3-Pin TO-247
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
65 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
230 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
3.5V
Height:
20.95mm
Width:
5.02mm
Length:
15.94mm
Minimum Gate Threshold Voltage:
2.5V
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
30.8 A
Transistor Material:
Si
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
88 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship TK31N60X,S1F(S Internationally to many countries around the world.
This is N-channel MOSFET 30.8 A 600 V DTMOSIV 3-Pin TO-247 manufactured by Toshiba. The manufacturer part number is TK31N60X,S1F(S. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 65 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 230 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 20.95mm. Furthermore, the product is 5.02mm wide. Its accurate length is 15.94mm. Whereas its minimum gate threshold voltage includes 2.5v. The package is a sort of to-247. It consists of 1 elements per chip. While 30.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.7v . It provides up to 88 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins.
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