This is MOSFET manufactured by ON Semiconductor. The manufacturer part number is FDP032N08B_F102. While 211 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.672mm wide. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 111 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 263 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.215mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.3 mω maximum drain source resistance.
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This is MOSFET manufactured by ON Semiconductor. The manufacturer part number is FDP032N08B_F102. While 211 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.672mm wide. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 111 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 263 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.215mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.3 mω maximum drain source resistance.
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