Toshiba TPN3300ANH,LQ(S N-channel MOSFET, 21 A, 100 V U-MOSVIII-H, 8-Pin TSON
Product Information
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
3.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TSON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11 nC @ 10 V
Channel Type:
N
Length:
3.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
27 W
Series:
U-MOSVIII-H
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.85mm
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
33 mΩ
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This is N-channel MOSFET 21 A 100 V U-MOSVIII-H 8-Pin TSON manufactured by Toshiba. The manufacturer part number is TPN3300ANH,LQ(S. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.1mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of tson. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 11 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 27 w maximum power dissipation. The product u-mosviii-h, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.85mm. Its forward diode voltage is 1.2v . It provides up to 33 mω maximum drain source resistance.
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