Infineon IRL40B209 N-channel MOSFET, 254 A, 40 V StrongIRFET, 3-Pin TO-220
Product Information
Maximum Continuous Drain Current:
164 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
56 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
143 W
Series:
StrongIRFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
3.5 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship IRL40B212 Internationally to many countries around the world.
This is IRL40B209 N-channel MOSFET 254 A 40 V StrongIRFET 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IRL40B212. While 164 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.83mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.4v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 56 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 143 w maximum power dissipation. The product strongirfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.51mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 3.5 mω maximum drain source resistance.
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