Toshiba TK28E65W,S1X(S N-channel MOSFET, 27.6 A, 650 V DTMOSIV, 3-Pin TO-220
Product Information
Maximum Continuous Drain Current:
27.6 A
Transistor Material:
Si
Width:
4.45mm
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
75 nC @ 10 V
Channel Type:
N
Length:
10.16mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
230 W
Series:
DTMOSIV
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.1mm
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
110 mΩ
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
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Yes. We ship TK28E65W,S1X(S Internationally to many countries around the world.
This is N-channel MOSFET 27.6 A 650 V DTMOSIV 3-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TK28E65W,S1X(S. While 27.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.45mm wide. It has a maximum of 650 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 75 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.16mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 230 w maximum power dissipation. The product dtmosiv, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.1mm. Its forward diode voltage is 1.7v . It provides up to 110 mω maximum drain source resistance.
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