Infineon IPG20N06S4L26ATMA1 Dual N-channel MOSFET, 20 A, 60 V OptiMOS, 8-Pin TDSON
Product Information
Maximum Drain Source Voltage:
60 V
Maximum Continuous Drain Current:
20 A
Mounting Type:
Surface Mount
Channel Type:
N
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
2
Pin Count:
8
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPG20N06S4L26ATMA1 Dual N-channel MOSFET, 20 A, 60 V OptiMOS, 8-Pin TDSON. You can also check on our website or by contacting our customer support team for further order details on Infineon IPG20N06S4L26ATMA1 Dual N-channel MOSFET, 20 A, 60 V OptiMOS, 8-Pin TDSON.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16887604 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16887604.
Yes. We ship IPG20N06S4L26ATMA1 Internationally to many countries around the world.
This is Dual N-channel MOSFET 20 A 60 V OptiMOS 8-Pin TDSON manufactured by Infineon. The manufacturer part number is IPG20N06S4L26ATMA1. It has a maximum of 60 v drain source voltage. While 20 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The package is a sort of superso8 5 x 6. It consists of 2 elements per chip. It contains 8 pins.
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