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This is N-channel MOSFET 55 A 80 V OptiMOS 3 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC123N08NS3GATMA1. It has a maximum of 80 v drain source voltage. With a typical gate charge at Vgs includes 19 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 66 w maximum power dissipation. The product optimos™ 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3.5v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 6.1mm wide. Its accurate length is 5.35mm. It provides up to 24 mω maximum drain source resistance. The package is a sort of tdson. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 55 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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£ 0.000
